Process for manufacturing a wafer by annealing of buried channels

ABSTRACT

A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

PRIORITY CLAIM

This application is a continuation application of U.S. patentapplication Ser. No. 10/327,702 filed 20 Dec. 2002, the benefit of thefiling date of which is claimed under 35 U.S.C. §120.

This application claims priority from European patent application No.01830820.5, filed Dec. 28, 2001, and U.S. patent application Ser. No.09/625,112, filed Jul. 25, 2000, now U.S. Pat. No. 6,518,147, issuedFeb. 11, 2003.

TECHNICAL FIELD

The present invention relates generally to semiconductor processing, andmore particularly to a process for manufacturing an SOI wafer annealingand oxidation of buried channels.

BACKGROUND

As is known, according to a solution that is currently very widespreadin the sector of the microelectronics industry, the substrate ofintegrated devices is obtained from monocrystalline silicon wafers. Inrecent years, as an alternative to wafers made of silicon alone,composite wafers have been proposed, namely the so calledsilicon-on-insulator (SOI) wafers, consisting of two silicon layers, oneof which is thinner than the other, separated by a silicon dioxidelayer.

However, manufacturing of SOI wafers entails some problems, especiallyas regards the complexity and cost of the process and the quality of thethinner silicon layer. In fact, this layer is designed to house bothhigh-power and low-power electronic devices, and the presence ofcrystallographic defects may irreparably impair the efficiency of thedevices.

One method for manufacturing SOI wafers that partially tackles the aboveproblems is described in EP-A1 073 112, filed on 26 Jul. 1999 in thename of the present applicant and incorporated by reference.

This method envisages initially forming, in a substrate of semiconductormaterial, for example monocrystalline silicon, a plurality of trencheswhich are substantially parallel and are separated from one another bysilicon partition walls. In order to open the trenches, the substrate isanisotropically etched using a hard mask, which comprises, for example,a pad oxide layer and a silicon nitride layer.

Subsequently, by isotropically etching silicon, the trenches are widenedso as to thin out the partition walls and form cavities which extendbeneath the surface of the substrate, which, at this stage, is stillprotected by the hard mask.

The cavities are then lined with an inhibiting silicon dioxide layer,and the hard mask is removed, thus leaving the surface of the substrateuncovered.

Next, an epitaxial growth is carried out. In this step, the silicongrows on top of the substrate and expands laterally so as to form auniform epitaxial layer that covers the entrance of the cavities.However, the inhibiting layer prevents silicon from growing inside thecavities, which thus are not filled and form buried channels.

Using a second anisotropic etch, connection trenches are opened, whichhave a depth such as to reach the cavities. Through the connectiontrenches, a thermal oxidation step is then performed, so that thepartition walls separating the cavities are completely oxidized and thecavities are filled with silicon dioxide. Thereby, a continuousinsulating region is formed, which separates the substrate and theepitaxial layer.

The process taught in the above mentioned patent application yields highquality SOI wafers, above all as regards crystallographic properties ofthe epitaxial layer, but has some limitations.

In fact, the processing steps required for forming the insulating regionare numerous and complex and render the manufacturing of the waferscostly. First, during isotropic etching for widening the trenches andforming the cavities, the surface of the substrate must be protected, inparticular with the hard mask. The formation of this mask, however,requires at least one oxidation step, one silicon nitride layerdeposition step, and one definition step using a further resist mask.The hard mask must moreover be removed through further special steps.

Second, before carrying out the epitaxial growth, the cavities must belined with the inhibiting layer; otherwise, in fact, the partition wallswould get thicker and subsequently could no longer be oxidizedcompletely. In addition, it is necessary to calibrate with precision thewidth of the inhibiting layer, which is partially removed during removalof the hard mask.

SUMMARY

Therefore, an embodiment of the present invention is a process thatovercomes the drawbacks of the manufacturing process described above.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the present invention, a preferredembodiment thereof is now described, purely as a non-limiting example,with reference to the attached drawings, wherein:

FIGS. 1-4 are cross-sectional views of a wafer of semiconductor materialin successive manufacturing steps, according to an embodiment of thepresent invention;

FIG. 5 is a top plan view of the wafer of FIG. 4;

FIG. 6 is a cross-sectional view of the wafer of FIG. 5 according toline VI-VI;

FIGS. 7-10 are a cross-sectional views of the wafer of FIG. 5 accordingto line VII-VII, in successive manufacturing steps;

FIG. 11 is a top plan view of a wafer of semiconductor material in aninitial manufacturing step according to a different embodiment of theinvention;

FIGS. 12 and 13 are cross-sectional views of the wafer of FIG. 11according to lines XII-XII and XIII-XIII, respectively; and

FIG. 14 presents the same view as in FIG. 12 in a subsequentmanufacturing step of the wafer.

DETAILED DESCRIPTION

The following discussion is presented to enable a person skilled in theart to make and use the invention. Various modifications to theembodiments will be readily apparent to those skilled in the art, andthe generic principles herein may be applied to other embodiments andapplications without departing from the spirit and scope of the presentinvention as defined by the appended claims. Thus, the present inventionis not intended to be limited to the embodiments shown, but is to beaccorded the widest scope consistent with the principles and featuresdisclosed herein.

In FIG. 1, a wafer of semiconductor material, for examplemonocrystalline silicon, is designated by 1 and comprises a substrate 2.In an initial step of the process according to an embodiment of theinvention, a resist layer is deposited directly on top of a face 3 ofwafer 1 and is defined to form a mask 4.

Next, the substrate 2 is etched anisotropically, for example through anSTS etch, and deep trenches 5 are opened at the regions left uncoveredby the mask 4, as shown in FIG. 2. In greater detail, the deep trenches5 are substantially rectilinear and extend parallel to each other in adirection perpendicular to the drawing plane. All the deep trenches 5have a initial height H and a same initial width W, and are separatedfrom one another by a wall 7 having an initial width S. The initialwidth W of the deep trenches 5 is substantially equal to the initialwidth S of the walls 7 (for example, 1 μm), while the initial depth H ismuch greater; preferably the ratio between the initial depth H and theinitial width W is not smaller than 5.

Next, mask 4 is removed, and an epitaxial growth is performed (FIG. 3).The silicon grows by a controlled amount on top of the face 3 of thewafer 1 and expands laterally until it closes the entrances of the deeptrenches 5, thus practically forming buried channels 8 embedded in thewafer 1 and completely surrounded by silicon. In an initial stage of theepitaxial growth, silicon grows also inside the deep trenches 5, beforethe latter are closed at the top. Consequently, the buried channels 8have cross sections that are substantially oval and elongated in adirection perpendicular to the surface 3′ of the wafer 1. In particular,the buried channels 8 have an intermediate width W′ and an intermediateheight H′, which are respectively smaller than the initial width Wandthe initial height H of the deep trenches 5. The intermediate width S′of the walls 7 is instead increased with respect to the initial width S(for example, the buried channels 8 have an intermediate width W′ of 0.5μm and an intermediate height H′ of 3 μm, and the partition walls 7 havean intermediate width S′ of 1.5 μm). In addition, the buried channels 8house the same atmosphere in which the wafer 1 is immersed when theepitaxial growth is performed. In particular, this atmosphere has a highhydrogen concentration and is deoxidizing.

As shown in FIG. 4, the cross section of the buried channels 8 issubsequently modified by a thermal annealing process having a controlledduration. For example, the wafer 1 is heated to 1150° C. for 5 hours. Inthis step there is no removal of silicon. In practice, when the wafer 1is heated in a deoxidizing atmosphere, the superficial silicon atomsaround the buried channels 8 migrate and tend to assume minimum energydistributions, as explained in the article “A New Substrate Engineeringfor the Formation of Empty Space in Silicon (ESS) Induced by SiliconSurface Migration” by T. Sato, N. Aoki, I. Mizushima, and Y. Tsunashima,IEDM 1999, pp. 517-520. In greater detail, the buried channels 8, whichinitially have an oval cross section, tend to assume a substantiallycircular cross section. At the end of the annealing step, then, theburied channels 8 have a final height H″ and a final width W″ which areapproximately equal to one another (for example, 1.5 μm), and thepartition walls 7 are thinned out to reach a final width S″ smaller thanthe initial width S (for example, 0.5 μm).

After annealing, a second masked trench etching is performed to open inthe wafer 1 at least one connection trench 10 having a depth such as toreach all the buried channels 8 and a width greater than the final widthS″ of the partition walls 7 (for example, 1 μm). Preferably, theconnection trench 10 extends along a closed line and delimits aninsulated monocrystalline silicon region 11, intended to subsequentlyform an active area for accommodating integrated components (FIGS. 5-7).

Next, thermal oxidation of the partition walls 7 and of the walls of theconnection trench 10 is carried out so as to form a silicon dioxideinsulating region 12. The oxygen required is fed to the buried channels8 through the connection trench 10. In this step, the oxide regionsgradually grow at the expense of the silicon regions that form thepartition walls 7 and the walls of the connection trench 10. Inparticular, the partition walls 7 are completely oxidized, by virtue ofthe width reduction caused by the previous annealing step. As shown inFIG. 8, the insulating region 12 surrounds the insulated region 11laterally and at the bottom, electrically insulating it from thesubstrate 2. Instead, the buried channels 8 and the connection trench 10are partly filled with thermal oxide, but remain partially open.

Next (FIG. 9), on the surface 3′ of the wafer 1 there is deposited alayer 13 of dielectric material, for example tetraethylorthosilicate(TEOS) oxide, which penetrates through the connection trench 10 andfills the buried channels 8 and the connection trench 10, preferablycompletely. In practice, the deposited dielectric material forms afilling area 14 within the insulating region 12. Consequently, theinsulating region 12 and the filling region 14 form an insulatingstructure which is compact and substantially without any cavities insideit. However, regions of very small diameter may remain unfilled, but donot significantly alter the properties of the insulating structure. Inparticular, in addition to electrical insulation, the substantialcontinuity of the insulating region 12 and of the filling region 14ensure thermal conductivity between the insulated region 11 and thesubstrate 2, and thus dispersion of the heat generated in the devicesmade in the wafer 1. The layer 13 of dielectric material is thenremoved.

The wafer 1 of FIG. 10 is thus obtained, wherein the SOI-type structurecan be clearly recognized. In particular, FIG. 10 shows the insulatedregion 11 and the substrate 2 separated from one another by theinsulating region 12 and the filling region 14. The substrate 2, whichhas a larger width, mainly performs the functions of support and heatdissipation, while inside the insulated region 11, which is thin, it ispossible to form active and passive integrated devices according to anyknown process.

According to a different embodiment of the invention, shown in FIGS.11-14, silicon columns 17 are initially formed in a substrate 16 of asemiconductor wafer 15, the silicon columns 17 preferably having ahexagonal shape in plan view and being organized in honeycomb fashion toobtain maximum packing. To this aim, silicon is selectively removed bytrench etching, and communicating trenches 18 are formed, which delimitthe columns 17. In practice, the communicating trenches 18 are connectedtogether so as to form a hollow region having a complex shape, in whichthe columns 17 extend.

Next, epitaxial growth and annealing are carried out, as abovedescribed. In particular, during the epitaxial growth, the deep trenches18 are closed, and a deep cavity 19 is formed, while during annealing,the columns 17 are thinned out in a central portion, thus assuming anhourglass shape (FIG. 13).

The process is then completed as previously described. In particular, aconnection trench 20 is opened, the columns 17 are completely oxidizedso as to form an insulating region 21 which delimits an insulatedsilicon region 22, and the buried cavity 19 is filled with TEOS oxide,thus forming filling regions 23.

The process described herein is extremely simple, at the same time itenables manufacturing of SOI wafers that are free from crystallographicdefects. In fact, the required processing steps are not so numerous asin known processes and can be easily included in standard processes formanufacturing integrated devices.

Particularly advantageous is the use of the annealing step, which,according to the described embodiments of the invention, is performedinstead of isotropic etching previously used for widening the trenches.The formation of structures, such as walls or columns, delimited bycavities and embedded in the silicon is in itself simple, in so far asit requires only one masked trench etch and one epitaxial growth. Thesubsequent annealing step allows the surfaces of the buried cavities(buried channels 8 and buried cavity 19) to be modified, widening thelatter and reducing the width of the silicon structures (partition walls7 and columns 17), so that the silicon structures can then be oxidized.The surface of the wafer is not, however, involved and thus does nothave to be protected; consequently, all the steps for forming andremoving hard masks are eliminated. Also the need for the inhibitinglayer is overcome: since the annealing follows epitaxial growth, formingsilicon inside the deep trenches 5 (or the communicating trenches 18) iswithin bearable limits, provided that these deep trenches are not filledcompletely.

In addition, the atmosphere entrapped inside the buried cavities is thesame as used for the epitaxial growth, namely an atmosphere with a highhydrogen concentration. In practice, the annealing step, which normallyrequires the use of a hydrogen oven, can be performed using a standardthermal process. Furthermore, with a single thermal process it ispossible to carry out both annealing and other manufacturing steps thatare normally envisaged for manufacturing components and/or integratedcircuits; for example, annealing could be carried out simultaneouslywith the diffusion of a previously implanted doping species.

Finally, it is clear that numerous modifications and variations may bemade to the process described and illustrated herein, all falling withinthe scope of the invention, as defined in the attached claims.

In particular, the process can be used for selectively insulatingportions of the wafer. Alternatively, the insulating region may extendthroughout the wafer.

Annealing could be carried out even before epitaxial growth. In thiscase, however, it would be necessary to use a hydrogen oven.

Furthermore, the initial shape of the trenches may be different from theshapes shown herein.

1.-32. (canceled)
 33. A method for forming a cavity in a semiconductorbody, the method comprising: forming a trench that delimits structure ofthe semiconductor body; forming an epitaxial layer in a deoxidizingatmosphere to close the trench and form a cavity encapsulated by thebody and containing a deoxidizing atmosphere; and modifying the cavity'sconfiguration by annealing the body.
 34. The method of claim 33 whereinthe trench includes a substantially rectilinear cross-section having aheight and a width, wherein the width is less than the height, andwherein the height divided by the width is greater than or equal tofive.
 35. The method of claim 33 wherein the structure includes at leastone of the two following structures, a wall and a column.
 36. The methodof claim 33 wherein the structure includes: a first wall having a width,a second wall having a width equivalent or substantially equivalent tothe first wall's width. a third wall having a width equivalent orsubstantially equivalent to the first wall's width, a first trenchdisposed between the first and second walls and having a widthequivalent or substantially equivalent to the first wall's width, and asecond trench disposed between the second and third walls and having awidth equivalent or substantially equivalent to the first wall's width.37. The method of claim 33 wherein: after forming an epitaxial layer butbefore annealing the body, the cavity has a substantially ovalcross-section, and after annealing the body, the cavity has asubstantially circular cross-section.
 38. The method of claim 33 whereinthe deoxidizing atmosphere includes a high concentration of hydrogen andthe cavity contains hydrogen.
 39. The method of claim 33 whereinannealing the body includes heating the body to 1150° C. orsubstantially 1150° C. for five or substantially five hours.
 40. Amethod, comprising: forming an opening in a region of a semiconductorlayer; forming an epitaxial layer on the semiconductor layer; andconverting the opening into a cavity encapsulated by semiconductormaterial, wherein converting the opening into a cavity includesannealing the region.
 41. The method of claim 40 wherein forming anopening includes removing material.
 42. The method of claim 40 whereinforming an epitaxial layer further comprises: closing the opening toform the cavity, and annealing the region after closing the opening. 43.The method of claim 42 wherein: after growing the epitaxial layer butbefore annealing the region, the cavity has a first shape, and afterannealing the region, the cavity has a second shape that is differentthan the first shape.
 44. The method of claim 42 wherein growing theepitaxial layer includes growing the layer in a deoxidizing atmosphere.45. The method of claim 42 wherein growing the epitaxial layer includesgrowing the layer in an atmosphere having a high concentration ofhydrogen.
 46. The method of claim 40 wherein annealing the regionincludes annealing the region in a deoxidizing atmosphere.
 47. Themethod of claim 40 further comprising disposing a circuit component inthe region and adjacent the cavity, the component operable to generate asignal.
 48. A semiconductor structure, comprising: a closed cavity; andan epitaxial layer disposed over the cavity.
 49. The semiconductorstructure of claim 48 wherein the closed cavity has a shape thatincludes a substantially circular cross-section.
 50. The semiconductorstructure of claim 48 wherein the epitaxial layer surrounds the closedcavity.
 51. A semiconductor structure, comprising: a region; a cavitydisposed in the region and formed by forming an opening in the region,and annealing the region; and an epitaxial layer disposed over thecavity.
 52. The semiconductor structure of claim 51 further comprising acircuit component disposed in the region and adjacent the cavity, thecomponent operable to generate a signal.
 53. The semiconductor structureof claim 51 wherein forming the cavity includes growing an epitaxiallayer to close the cavity before annealing the region.
 54. A system,comprising: a first integrated circuit, comprising a semiconductorstructure, comprising: a closed cavity; and an epitaxial layer disposedover the cavity. a second integrated circuit coupled to the firstintegrated circuit.
 55. The system of claim 54 wherein the first andsecond integrated circuits are disposed on a same die.
 56. The system ofclaim 54 wherein the first and second integrated circuits are disposedon respective dies.
 57. The system of claim 54 wherein the secondintegrated circuit comprises a controller.